RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.375INCH, FM-4
DESCRIPTION:
The ASI is Designed for Class C, 12.5 Volt operation in FM Amplifier Applications up to 250 MHz
FEATURES INCLUDE:
• PG= 9.0 dB Typical at 175 MHz
• Emitter Ballasting
• Omnigold™ Metalization System
贸泽:
RF Bipolar Transistors RF Transistor