TC2320TG

Trans MOSFET N/P-CH 200V 8Pin SOIC N

General Description

The consists of a high voltage, low threshold N- and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Features

► Low threshold

► Low on resistance

► Low input capacitance

► Fast switching speeds

► Freedom from secondary breakdown

► Low input and output leakage

► Independent, electrically isolated N- and P channels

Applications

► Medical ultrasound transmitters

► High voltage pulsers

► Amplifi ers

► Buffers

► Piezoelectric transducer drivers

► General purpose line drivers

► Logic level interface