BC860BWH6327XTSA1

SOT-323 PNP 45V 0.1A

- 双极 BJT - 单 PNP 250MHz 表面贴装型 PG-SOT323-3

得捷:
TRANS PNP 45V 0.1A SOT323

艾睿:
Compared to other transistors, the PNP BC860BWH6327XTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans GP BJT PNP 45V 0.1A 3-Pin SOT323 T/R

Verical:
Trans GP BJT PNP 45V 0.1A 250mW Automotive 3-Pin SOT-323 T/R