PCFFS20120AF

PCFFS20120AF: SiC 二极管，1200V，20A，裸片

Silicon Carbide SiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Features

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Max Junction Temperature 175 °C

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Avalanche Rated 200 mJ

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High Surge Current Capacity

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Positive Temperature Coefficient

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Ease of Paralleling

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No Reverse Recovery / No Forward Recovery