IXDN602SI

IXDN602SI概述

IXDN 系列 35 V 2 A 2.5 Ohm 低压侧 超快 MOSFET 驱动器 - SOIC-8

低端 栅极驱动器 IC 非反相 8-SOIC-EP


得捷:
IC GATE DRVR LOW-SIDE 8SOIC


立创商城:
低边 IGBT MOSFET 灌:2A 拉:2A


艾睿:
Say goodbye to transistors not being provided proper biasing current by using this IXDN602SI power driver by Ixys Corporation. This device has a maximum propagation delay time of 60 ns. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V. This gate driver has an operating temperature range of -40 °C to 125 °C.


Chip1Stop:
Driver 2A 2-OUT Lo Side Non-Inv 8-Pin SOIC EP Tube


Verical:
Driver 2A 2-OUT Low Side Non-Inv 8-Pin SOIC EP Tube


IXDN602SI数据文档
型号 品牌 下载
IXDN602SI

IXYS Semiconductor

下载
IXDN509SIAT/R

IXYS Semiconductor

下载
IXDN514D1T/R

IXYS Semiconductor

下载
IXDN514SIAT/R

IXYS Semiconductor

下载
IXDN604SI

IXYS Semiconductor

下载
IXDN602SIA

IXYS Semiconductor

下载
IXDN609SI

IXYS Semiconductor

下载
IXDN630CI

IXYS Semiconductor

下载
IXDN630YI

IXYS Semiconductor

下载
IXDN602PI

IXYS Semiconductor

下载
IXDN604SIATR

IXYS Semiconductor

下载

锐单商城 - 一站式电子元器件采购平台