2SC5195

2SC5195 NPN三极管 9V 100mA/0.1A 5GHz 80~160 SOT-523 marking/标记 88 低噪声微波放大

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 9V

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集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 6V

集电极连续输出电流ICCollector CurrentIC| 100mA/0.1A

截止频率fTTranstion FrequencyfT| 5GHz

直流电流增益hFEDC Current GainhFE| 80~160

管压降VCE（sat）Collector-Emitter Saturation Voltage|

耗散功率PcPower Dissipation| 125mW/0.125W

Description & Applications| MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB . @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB . @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Supercompact Mini Mold Package

描述与应用| 微波低噪声放大器 NPN硅外延晶体管 特点 •低电压操作，低相位失真 •低噪声 NF=1.5分贝。 @ VCE= 3 V，IC =7毫安，F =2吉赫 NF=1.5分贝。 @ VCE= 1 V，IC =3毫安，F =2吉赫 •大绝对最大集电极电流 IC= 100 mA时 •小型模具Supercompact包装