TK18A50DQ,M

TOSHIBA  TK18A50DQ,M  晶体管, MOSFET, N沟道, 18 A, 500 V, 230 mohm, 10 V, 2 V

The is a N-channel enhancement-mode Silicon MOSFET suitable for switching regulator applications.

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Low drain-source ON-resistance

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8.5S High forward transfer admittance

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10µA Maximum low leakage current

Using continuously under heavy loads may cause this product to decrease in the reliability significantly even if the operating conditions are within the absolute maximum ratings.