2SB1203T-TL-E

2SB1203T-TL-E概述

双极晶体管50V , (A ????) 5A ,低VCE (SAT) , ( PNP ) NPN单TP / TP -FA Bipolar Transistor 50V, –5A, Low VCEsat, PNPNPN Single TP/TP-FA

Applications

• Relay drivers, high-speed inverters, converters, and other general high-current switching applications

Features

• Low collector-to-emitter saturation voltage  

• High current and high fT

• Excellent linearity of hFE

• Fast switching speed

• Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller


得捷:
TRANS PNP 50V 5A TP-FA


立创商城:
PNP 50V 5A


艾睿:
The three terminals of this PNP 2SB1203T-TL-E GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans GP BJT PNP 50V 5A 3-Pin2+Tab TP-FA T/R


Chip1Stop:
Trans GP BJT PNP 50V 5A 3-Pin2+Tab TP-FA T/R


Verical:
Trans GP BJT PNP 50V 5A 1000mW 3-Pin2+Tab DPAK T/R


Win Source:
TRANS PNP 50V 5A TP-FA


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