A2G35S160-01SR3

RF Power Transistor,3400 to 3600MHz, 126W, Typ Gain in dB is 15.7 @ 3500MHz, 48V, GaN, SOT1828

Overview

The 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz.

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## Features

* High Terminal Impedances for Optimal Broadband Performance

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

## Features RF Performance Table

### 3500 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 190 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

3400 MHz| 15.6| 37.2| 7.0| –33.6| –16

3500 MHz| 15.7| 36.7| 7.2| –34.1| –16

3600 MHz| 15.9| 38.9| 7.2| –33.2| –13