T1G3000532-SM

T1G3000532-SM概述

射频结栅场效应晶体管RF JFET晶体管 .03-3.5GHz PAE 64.7% P3dB 5.7W @3GHz 32V

The TriQuint is a 5W P3dB, 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.5 GHz. The device is constructed with TriQuint"s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant.

T1G3000532-SM数据文档
型号 品牌 下载
T1G3000532-SM

Qorvo

下载

锐单商城 - 一站式电子元器件采购平台