CPH5506-TL-E

NPN/PNP 晶体管，On Semiconductor每个双晶体管封装均包含 NPN 或 PNP 设备### 双极性晶体管，On SemiconductorON Semiconductor 的各种双极晶体管，包括以下类别：小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管

双 NPN/PNP ，On Semiconductor

每个双晶体管封装均包含 NPN 或 PNP 设备

得捷:
TRANS NPN/PNP 30V 1.5A 5CPH

欧时:
ON Semiconductor CPH5506-TL-E, 双 NPN + PNP 晶体管, 1.5 A, Vce=30 V, HFE:200, 450 NPN MHz，500 PNP MHz, 5引脚

贸泽:
Bipolar Transistors - BJT HIGH-FREQUENCY AMPLIFIER

e络盟:
双极晶体管阵列, NPN, PNP, -30 V, 900 mW, -1.5 A, 200 hFE, SOT-25

艾睿:
The three terminals of this npn and PNP CPH5506-TL-E GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT NPN/PNP 30V 1.5A 5-Pin CPH T/R

Verical:
Trans GP BJT NPN/PNP 30V 1.5A 1200mW 5-Pin CPH T/R

Win Source:
TRANS NPN/PNP 30V 1.5A 5CPH