MUN5212DW1T1G

ON SEMICONDUCTOR  MUN5212DW1T1G.  晶体管

- 双极 BJT - 阵列 - 预偏置 2 个 NPN 预偏压式（双） 50V 100mA - 250mW 表面贴装型 SC-88/SC70-6/SOT-363

得捷:
TRANS 2NPN PREBIAS 0.25W SOT363

欧时:
ON Semiconductor, MUN5212DW1T1G

立创商城:
双 NPN 双极数字晶体管 BRT

e络盟:
晶体管 双极预偏置/数字, AEC-Q100, 双路 NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率

艾睿:
In addition to offering some of the benefits of traditional BJTs, the NPN MUN5212DW1T1G digital transistor, developed by ON Semiconductor, can be used in digital signal processing circuits as well. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA 385mW Automotive 6-Pin SC-88 T/R

Verical:
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SC-88 T/R

Newark:
# ON SEMICONDUCTOR  MUN5212DW1T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 22 kohm, 22 kohm, 1 Ratio, SOT-363

Win Source:
TRANS 2NPN PREBIAS 0.25W SOT363