VND10N06 单通道 低边 自保护 60 V 10 A 0.3 Ohm 功率MOSFET-TO-252-3
Description
The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Logic level input threshold
■ ESD protection
■ Schmitt trigger on input
■ High noise immunity
| 型号 | 品牌 | 下载 |
|---|---|---|
| VND10N06TR-E | ST Microelectronics 意法半导体 | 下载 |
| VND1NV04TR-E | ST Microelectronics 意法半导体 | 下载 |
| VND1NV04-E | ST Microelectronics 意法半导体 | 下载 |
| VND1NV04 | ST Microelectronics 意法半导体 | 下载 |
| VND1NV04-1-E | ST Microelectronics 意法半导体 | 下载 |
| VND1NV04-1 | ST Microelectronics 意法半导体 | 下载 |
| VND10N06-E | ST Microelectronics 意法半导体 | 下载 |
| VND1NV0413TR | ST Microelectronics 意法半导体 | 下载 |
| VND10N06-1-E | ST Microelectronics 意法半导体 | 下载 |
| VND10N0613TR | ST Microelectronics 意法半导体 | 下载 |
| VND10N06-1 | ST Microelectronics 意法半导体 | 下载 |