功率半导体功率模块 Power Semiconductors Power Modules
This IGBT transistor from will work perfectly in your circuit. Its maximum power dissipation is 961000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT70GR120L | Microsemi 美高森美 | 下载 |
| APT75GN60B2DQ3G | Microsemi 美高森美 | 下载 |
| APT75GN120J | Microsemi 美高森美 | 下载 |
| APT75GN120JDQ3G | Microsemi 美高森美 | 下载 |
| APT75DQ60BG | Microsemi 美高森美 | 下载 |
| APT75DQ120BG | Microsemi 美高森美 | 下载 |
| APT7F80K | Microsemi 美高森美 | 下载 |
| APT75DQ100BG | Microsemi 美高森美 | 下载 |
| APT7F120B | Microsemi 美高森美 | 下载 |
| APT7F100B | Microsemi 美高森美 | 下载 |
| APT7M120B | Microsemi 美高森美 | 下载 |