低功耗单路总线缓冲器具有三态输出门 LOW-POWER SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT
* Available in the Texas Instruments NanoStar™ Package * Low Static-Power Consumption ICC = 0.9 µA Max * Low Dynamic-Power Consumption Cpd = 4 pF Typ at 3.3 V * Low Input Capacitance Ci = 1.5 pF Typ * Low Noise – Overshoot and Undershoot CC * Input-Disable Feature Allows Floating Input Conditions * Ioff Supports Partial-Power-Down Mode Operation * Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at Input * Wide Operating VCC Range of 0.8 V to 3.6 V * Optimized for 3.3-V Operation * 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation * tpd = 4.6 ns Max at 3.3 V * Suitable for Point-to-Point Applications * Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II * ESD Performance Tested Per JESD 22− * 2000-V Human-Body Model A114-B, Class II * 1000-V Charged-Device Model C101
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