High Power RF LDMOS FET, 190W, 28V, 1805 – 1880MHz
Summary of Features:
-
.
-
Asymmetric Doherty Design
\- Main: P1dB = 70 W Typ
\- Peak: P1dB = 120 W Typ
-
.
-
Broadband input and output matching
-
.
-
Typical two-carrier WCDMA performance at 1842 MHz, 28 V Doherty Configuration
\- Average output power = 44.6 dBm
\- Linear Gain = 15.5 dB
\- Efficiency = 46%
\- IMD = -25 dBc
-
.
-
Increased negative gate-source voltage range for improved performance in Doherty amplifiers
-
.
-
Capable of handling 3:1 VSWR @ 30 V, 50 W avg output power. Single-carrier WCDMA 10 dB PAR, Doherty test fixture.
-
.
-
Integrated ESD protection
-
.
-
Pb-free and RoHS compliant
-
.
-
Package: H-37248-4, earless