2SC3324GRTE85LF

Trans GP BJT NPN 120V 0.1A 3Pin S-Mini T/R

- 双极 BJT - 单 NPN 120 V 100 mA 100MHz 150 mW 表面贴装型 TO-236

得捷:
TRANS NPN 120V 0.1A TO236

艾睿:
Design various electronic circuits with this versatile NPN 2SC3324GRTE85LF GP BJT from Toshiba. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 125 °C.

Verical:
Trans GP BJT NPN 120V 0.1A 3-Pin S-Mini T/R

Win Source:
TRANS NPN 120V 0.1A S-MINI