JANTX2N6351

JANTX2N6351概述

NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR

This high speed NPN transistor is military qualified up to the JANTXV level.  This TO-33 leaded top-hat has three isolated terminals with terminal four, the collector terminal, tied to the case.


艾睿:
Amplify your current using Microsemi&s;s NPN JANTX2N6351 Darlington transistor in order to yield a higher current gain. This product&s;s maximum continuous DC collector current is 5 A, while its minimum DC current gain is 1000@1A@5 V|1000@5A@5V|200@10A@5V. It has a maximum collector emitter saturation voltage of 2.5@10mA@5A V. This Darlington transistor array&s;s maximum emitter base voltage is 12 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 12 V. This Darlington transistor array has an operating temperature range of -55 °C to 125 °C.


Verical:
Trans Darlington NPN 150V 5A 1000mW 4-Pin TO-33 Box


JANTX2N6351数据文档
型号 品牌 下载
JANTX2N6351

Microsemi 美高森美

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JANTX2N2905A

Microsemi 美高森美

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JANTX2N2907AUA

Microsemi 美高森美

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JANTX2N2920

Microsemi 美高森美

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JANTX1N5305-1

Microsemi 美高森美

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JANTX2N3019

Microsemi 美高森美

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JANTX1N5310-1

Microsemi 美高森美

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JANTX2N3019S

Microsemi 美高森美

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JANTX1N5314-1

Microsemi 美高森美

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JANTX1N5312UR-1

Microsemi 美高森美

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JANTX1N5314UR-1

Microsemi 美高森美

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