IXZR08N120A

IXYS RF  IXZR08N120A  晶体管, 射频FET, 1.2 kV, 8 A, 250 W, ISOPLUS247

The is a N-channel RF Power MOSFET optimized for RF and high speed switching. The device offers isolated substrate, high isolation voltage >2500V, excellent thermal transfer and increased temperature and power cycling capability.

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Easy to mount

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No insulators needed

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Low gate charge and capacitances

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Easier to drive

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Faster switching

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Low RDS ON

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Very low insertion inductance <2nH