SRAM Chip Async Single 3.3V 16M-Bit 512K x 32 10ns 119Pin BGA T/R
* High speed * tAA = 10 ns * Low active power * ICC = 175 mA at 100 MHz * Low complementary metal oxide semiconductor CMOS standby power * ISB2 = 25 mA * Operating voltages of 3.3 ± 0.3 V * 2.0 V data retention * Automatic power down when deselected * Transistor-transistor logic TTL compatible inputs and outputs * Easy memory expansion with CE/ and OE1/, CE/ and OE2/, and CE/ and OE/3 features * Available in Pb-free 119-ball plastic ball grid array PBGA package
艾睿:
SRAM Chip Async Single 3.3V 16M-Bit 512K x 32 10ns 119-Pin BGA T/R
安富利:
SRAM Chip Async Single 3.3V 16M-Bit 512K x 32 10ns 119-Pin BGA T/R
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