PMPB20EN

NXP  PMPB20EN  晶体管, MOSFET, N沟道, 10.4 A, 30 V, 0.0165 ohm, 10 V, 1.5 V

The is a N-channel enhancement-mode FET in a leadless medium power surface-mount plastic package using Trench MOSFET technology. It is suitable for use in charging switch for portable devices, DC-to-DC converters and hard disk and computing power management applications.

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Very fast switching

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Small and leadless ultra thin SMD plastic package

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Exposed drain pad for excellent thermal conduction

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Tin-plated 100% solderable side pads for optical solder inspection

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-55 to 150°C Junction temperature range