ON SEMICONDUCTOR TIP31BG 射频双极晶体管
If you require a general purpose BJT that can handle high voltages, then the NPN BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| TIP31BG | ON Semiconductor 安森美 | 下载 |
| TIP32A | ST Microelectronics 意法半导体 | 下载 |
| TIP33C | ST Microelectronics 意法半导体 | 下载 |
| TIP34C | ST Microelectronics 意法半导体 | 下载 |
| TIP32C | Fairchild 飞兆/仙童 | 下载 |
| TIP30C | Fairchild 飞兆/仙童 | 下载 |
| TIP32CG | ON Semiconductor 安森美 | 下载 |
| TIP32G | ON Semiconductor 安森美 | 下载 |
| TIP31A | Fairchild 飞兆/仙童 | 下载 |
| TIP30CG | ON Semiconductor 安森美 | 下载 |
| TIP31C | Fairchild 飞兆/仙童 | 下载 |