2SB817C-1E

ON SEMICONDUCTOR  2SB817C-1E  Bipolar BJT Single Transistor, PNP, -140 V, 10 MHz, 120 W, -12 A, 35 hFE 新

- 双极 BJT - 单 PNP 10MHz 通孔 TO-3P-3L

得捷:
TRANS PNP 140V 12A TO3P-3L

贸泽:
双极晶体管 - 双极结型晶体管BJT BIP PNP 12A 140V

e络盟:
Bipolar BJT Single Transistor, PNP, -140 V, 10 MHz, 120 W, -12 A, 35 hFE

艾睿:
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the PNP 2SB817C-1E general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2500 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
BIP PNP 12A 140V

Verical:
Trans GP BJT PNP 140V 12A 2500mW 3-Pin3+Tab TO-3P Tube

Newark:
# ON SEMICONDUCTOR  2SB817C-1E  TRANS, BIPOL, PNP, -140V, TO-247