高压快速开关NPN功率晶体管 High voltage fast-switching NPN Power Transistor
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds. The device is designed for use as PFC in high frequency ballast half bridge voltage fed topology.
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
Applications
■ Electronic ballast for fluorescent lighting
■ Dedicated for PFC solution in half-bridge voltage fed topology.