IKZ75N65EL5XKSA1

单晶体管, IGBT, 100 A, 1.1 V, 536 W, 650 V, TO-247, 4 引脚

Summary of Features:

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Lowest saturation voltage V CEsat of only 1.05V

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Low switching losses of 1.6mJ @ 25°C for 30A IGBT

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High thermal stability of electrical parameters - only 2% drift with T j increase from 25°C to 175°C

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Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package

Benefits:

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Higher efficiency for 50Hz

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Longer lifetime and higher reliability of IGBT

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High design reliability due to stable thermal performance

Target Applications:

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UPS

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Solar

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Welding