SMUN5211DW1T1G

ON SEMICONDUCTOR  SMUN5211DW1T1G  晶体管 双极预偏置/数字, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率, SOT-363 新

The NPN digital transistor from is your alternative to traditional BJTs in that it can provide digital signal processing power. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.