STP6NM60N

STP6NM60N概述

N沟道600V - 0.85ヘ - 4.6A - TO- 220 - TO- 220FP - IPAK - DPAK第二代MDmesh⑩功率MOSFET N-channel 600V - 0.85ヘ - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET

通孔 N 通道 600 V 4.6A(Tc) 45W(Tc) TO-220AB


得捷:
MOSFET N-CH 600V 4.6A TO-220


贸泽:
MOSFET N Ch 600V 0.85 Ohm 4.6A


艾睿:
Make an effective common source amplifier using this STP6NM60N power MOSFET from STMicroelectronics. Its maximum power dissipation is 45000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.


Verical:
Trans MOSFET N-CH 600V 4.6A 3-Pin3+Tab TO-220AB Tube


Win Source:
MOSFET N-CH 600V 4.6A TO-220


STP6NM60N数据文档
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