IRF740LCPBF

VISHAY  IRF740LCPBF  晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V

The is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge. This new low charge Power device achieves significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. This device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFET offers the designer a new standard in power transistors for switching applications.

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Repetitive avalanche rated

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Reduced gate drive requirement

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30V Enhanced VGS Rating

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Reduced CISS, COSS, CRSS

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Extremely high frequency operation