DMG6602SVT

DIODES INC.  DMG6602SVT  双路场效应管, MOSFET, N和P沟道, 3.4 A, 30 V, 0.038 ohm, 10 V, 1 V

The from Diode Inc is a surface mount complementary pair enhancement mode MOSFET in TSOT-26 package. This MOSFET features low input capacitance, fast switching speed and low input/output leakage, designed to minimize the onstate resistance and maintain superior switching performance, making it ideal for high efficiency power management applications and backlighting.

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Automotive grade AEC-Q101 qualified

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UL recognized

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Drain to source voltage Vds of 30V

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Gate to source voltage Vgs of ±20V

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Continuous drain current of 3.4A

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Power dissipation Pd of 1.27W

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Operating temperature range -55°C to 150°C

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Low on state resistance of 38mohm at Vgs of 10V