2A 高电压高侧和低侧闸极驱动器
The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds LM5100A/B/C or TTL input thresholds LM5101A/B/C.
An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.
MOSFETs
Times
Typical
型号 | 品牌 | 下载 |
---|---|---|
LM5101B | TI 德州仪器 | 下载 |
LM5116MH/NOPB | TI 德州仪器 | 下载 |
LM5122MH/NOPB | TI 德州仪器 | 下载 |
LM5118MH/NOPB | TI 德州仪器 | 下载 |
LM5116MHX/NOPB | TI 德州仪器 | 下载 |
LM5122QMH/NOPB | TI 德州仪器 | 下载 |
LM5175PWPR | TI 德州仪器 | 下载 |
LM5175PWPT | TI 德州仪器 | 下载 |
LM5116WG/NOPB | TI 德州仪器 | 下载 |
LM5118Q1MH/NOPB | TI 德州仪器 | 下载 |
LM5119QPSQ/NOPB | TI 德州仪器 | 下载 |