UNR51A1G0L

特点•内置电阻晶体管 •硅PNP外延刨床晶..

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -50V 集电极连续输出电流IC Collector CurrentIC| -80mA 基极输入电阻R1 Input ResistanceR1| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 10KΩ/Ohm 电阻比R1/R2 Resistance Ratio| 1 直流电流增益hFE DC Current GainhFE| 35 截止频率fT Transtion FrequencyfT| 80MHz 耗散功率Pc Power Dissipation| 0.15W/150mW Description & Applications| Features •Transistors with built-in Resistor •Silicon PNP epitaxial planer transistor •Costs can be reduced through downsizing of the equipment and reduction of the number of parts. •SMini type package allowing easy automatic insertion through tape packing 描述与应用| 特点 •内置电阻 •硅PNP外延刨床晶体管 •成本可以减少设备通过裁员和减少部件的数量。 •SMINI型封装，便于通过自动插入磁带包装