RES THNFLM D55342 1206 620Ω 5% 25PPM 0.01%
* Established reliability, “S” and “V” failure rate level 10 ppm, C = 2 * High purity alumina substrate * Wraparound termination featuring a tenacious adhesion layer covered with an electroplated nickel barrier layer for +150 °C operating conditions * Very low noise and voltage coefficient * Non-inductive * Laser-trimmed tolerances ± 0.1 % * Wraparound resistance less than 0.010 Ω typical * In-lot tracking less than 5 ppm/°C * Complete MIL-testing available in-house * Antistatic waffle pack or tape and reel packaging available * Military / aerospace / QPL
| 型号 | 品牌 | 下载 |
|---|---|---|
| D55342E07B620JRT1 | Vishay Semiconductor 威世 | 下载 |
| D55342K07B100ERWB | Vishay Semiconductor 威世 | 下载 |
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| D55342K07B100DRWB | Vishay Semiconductor 威世 | 下载 |
| D55342K07B182DRWB | Vishay Semiconductor 威世 | 下载 |
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| D55342K07B475DRWB | Vishay Semiconductor 威世 | 下载 |
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| D55342K07B200DRWB | Vishay Semiconductor 威世 | 下载 |