IKD15N60RATMA1

IGBT 晶体管 IGBT w/ INTG DIODE 600V 30A

Summary of Features:

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Optimized parameters for up to 20% lower switching losses

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Operating range of DC to 30kHz

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Max junction temperature 175°C

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Short circuit capability of 5µs

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Very tight parameter distribution

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Best in class current versus package size performance

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Smooth switching performance leading to low EMI levels

Benefits:

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Excellent cost/performance for hard switching applications

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Outstanding temperature stability

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Very good EMI behavior

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Up to 60% space saving on the PCB

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Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching