BYQ28EB-150HE3/45

BYQ28EB-150HE3/45概述

Rectifiers 10A 150V 20ns Dual 55A IFSM

FEATURES

• Glass passivated chip junction

• Ultrafast recovery times

• Soft recovery characteristics

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package

• Solder dip 260 °C, 40 s for TO-220AB and ITO-220AB package

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


得捷:
DIODE ARRAY GP 150V 5A TO263AB


艾睿:
Diode Switching 150V 10A Automotive 3-Pin2+Tab TO-263AB Tube


BYQ28EB-150HE3/45数据文档
型号 品牌 下载
BYQ28EB-150HE3/45

Vishay Semiconductor 威世

下载
BYQ28E-200E,127

NXP 恩智浦

下载
BYQ28E-200/H,127

NXP 恩智浦

下载
BYQ28ED-200,118

NXP 恩智浦

下载
BYQ28E-150-E3/45

Vishay Semiconductor 威世

下载
BYQ28E-200-E3/45

Vishay Semiconductor 威世

下载
BYQ28E-200HE3/45

Vishay Semiconductor 威世

下载
BYQ28E-100HE3/45

Vishay Semiconductor 威世

下载
BYQ28EB-100-E3/81

Vishay Semiconductor 威世

下载
BYQ28EF-100-E3/45

Vishay Semiconductor 威世

下载
BYQ28EB-100HE3/45

Vishay Semiconductor 威世

下载

锐单商城 - 一站式电子元器件采购平台