MMST4126-7-F

MMST4126-7-F概述

Trans GP BJT PNP 25V 0.2A 3Pin SOT-323 T/R

Bipolar BJT Transistor PNP 25V 200mA 250MHz 200mW Surface Mount SOT-323


得捷:
TRANS PNP 25V 0.2A SC70-3


艾睿:
Design various electronic circuits with this versatile PNP MMST4126-7-F GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 4 V. Its maximum power dissipation is 200 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans GP BJT PNP 25V 0.2A 3-Pin SOT-323 T/R


Chip1Stop:
Trans GP BJT PNP 25V 0.2A 3-Pin SOT-323 T/R


Verical:
Trans GP BJT PNP 25V 0.2A Automotive 3-Pin SOT-323 T/R


Win Source:
TRANS PNP 25V 0.2A SC70-3


DeviceMart:
TRANSISTOR PNP 25V SC70-3


MMST4126-7-F数据文档
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