FDS9936A

双N沟道增强型场效应晶体管 Dual N-Channel Enhancement Mode Field Effect Transistor

General Description  

SO-8N-Channel enhancement mode power field effect transistors are produced using "s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to  provide superior switching performance and minimize on-state resistance.These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

 Features

5.5 A, 30 V. RDSON= 0.040 W@ VGS= 10V,

                RDSON= 0.060 W@ VGS= 4.5 V.

High density cell design for extremely low RDSON.

High power and current handling capability in a widely used surface mount package.

Dual MOSFET in surface mount package