SST29SF040-55-4C-NHE

SST29SF040-55-4C-NHE概述

SIC PLCC32 FLASH 512KX8 RoHS

PRODUCT DESCRIPTION

The SST29SF040 and SST29VF040 are 512K x8 CMOS Small-Sector Flash SSF manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29SF040 devices write Program or Erase with a 4.5-5.5V power supply. The SST29VF040 devices write Program or Erase with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:

• Organized as 512K x8

• Single Voltage Read and Write Operations

  – 4.5-5.5V-only for SST29SF040

  – 2.7-3.6V for SST29VF040

• Superior Reliability

  – Endurance: 100,000 Cycles typical

  – Greater than 100 years Data Retention

• Low Power Consumption typical values at 5 MHz

  – Active Current: 10 mA typical

  – Standby Current:

    30 µA typical for SST29SF040

    1 µA typical for SST29VF040

• Sector-Erase Capability

  – Uniform 128 Byte sectors

• Fast Read Access Time:

  – 55 ns for SST29SF040

  – 55 ns and 70 ns for SST29VF040

• Latched Address and Data

• Fast Erase and Byte-Program:

  – Sector-Erase Time: 18 ms typical

  – Chip-Erase Time: 70 ms typical

  – Byte-Program Time: 14 µs typical

  – Chip Rewrite Time: 8 seconds typical

• Automatic Write Timing

  – Internal VPPGeneration

• End-of-Write Detection

  – Toggle Bit

  – Data# Polling

• TTL I/O Compatibility for SST29SF040

• CMOS I/O Compatibility for SST29VF040

• JEDEC Standard

  – Flash EEPROM Pinouts and command sets

• Packages Available

  – 32-lead PLCC

  – 32-lead TSOP 8mm x 14mm

SST29SF040-55-4C-NHE数据文档
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