CNY75GB

CNY75GB概述

VISHAY  CNY75GB.  光耦合器

* Isolation materials according to UL 94-VO * Pollution degree 2 DIN/VDE 0110/resp. IEC 60664 * Climatic classification 55/110/21 IEC 60068 part 1 * Low temperature coefficient of CTR * CTR offered in 3 groups * Rated isolation voltage RMS includes DC VIOWM = 600 VRMS 848 V peak * Rated recurring peak voltage repetitive VIORM = 600 VRMS * Rated impulse voltage transient overvoltage VIOTM = 6 kVpeak * Isolation test voltage partial discharge test voltage Vpd = 1.6 kV * Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 325 * Thickness through insulation ≥ 0.4 mm * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

CNY75GB数据文档
型号 品牌 下载
CNY75GB

Vishay Semiconductor 威世

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CNY75GC

Vishay Semiconductor 威世

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CNY74-4H

Vishay Semiconductor 威世

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CNY75C

Vishay Semiconductor 威世

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CNY70

Vishay Semiconductor 威世

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CNY75B

Vishay Semiconductor 威世

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CNY75GA

Vishay Semiconductor 威世

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CNY75A

VISHAY 威世

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CNY74-2H

Vishay Semiconductor 威世

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