MTD20N06HDL

功率MOSFET 20安培， 60伏特，逻辑电平N沟道DPAK Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK

Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK

This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low−voltage, high−speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

Features

•Avalanche Energy Specified

•Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

•Diode is Characterized for Use in Bridge Circuits

•IDSSand VDSonSpecified at Elevated Temperature

•Pb−Free Package is Available