SIHF12N60E-E3

SIHF12N60E-E3概述

VISHAY  SIHF12N60E-E3  功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V

The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.

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Low figure-of-meritFOM RON x Qg
.
Low input capacitance CISS
.
Reduced switching and conduction losses
.
Ultra low gate charge
.
Avalanche energy rated
SIHF12N60E-E3数据文档
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