DF120R12W2H3_B27

DF120R12W2H3_B27概述

IGBT 模块

Summary of Features:

.
High Speed IGBT H3
.
Low Switching Losses
.
Fast Silicon diode 1200V
.
Al2O3 Substrate with Low Thermal Resistance
.
Integrated NTC temperature sensor
.
PressFIT Contact Technology

Benefits:

.
Compact module concept
.
Optimized customer’s development cycle time and cost
.
Configuration flexibility
DF120R12W2H3_B27数据文档
型号 品牌 下载
DF120R12W2H3_B27

Infineon 英飞凌

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DF123.0-60DP-0.5V86

Hirose Electric 广濑

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DF123.5-30DP-0.5V86

Hirose Electric 广濑

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DF12A3.0-32DS-0.5V81

Hirose Electric 广濑

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DF12A-36DS-0.5V81

Hirose Electric 广濑

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DF12A3.0-80DS-0.5V81

Hirose Electric 广濑

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DF124.0-50DP-0.5V86

Hirose Electric 广濑

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DF125.0-50DP-0.5V86

Hirose Electric 广濑

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DF12B3.0-60DS-0.5V86

Hirose Electric 广濑

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DF12B3.0-60DP-0.5V86

Hirose Electric 广濑

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DF123.0-32DS-0.5V86

Hirose Electric 广濑

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