FPF2C110BI07AS2

FPF2C110BI07AS2概述

Power Integrated Module, F2, SiC Diode + MOSFET + IGBT, 650V

Fairchild"s Boost and H-Bridge module is designed for a power stage that needs more compact design. And the Press-fit technology provides simple and reliable mounting. This module is optimized for the application such as solar inverter where a high efficiency and robust design are needed.

Features

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Boost Stage- Dual Boost Topology- SiC Boost Diode- Low RDSON Boost Switch- Low VF and High Voltage Bypass Diode
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Inverter Stage- H-bridge Topology- High Speed IGBT and Fast Recovery FWD
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Integrated DC-capacitor for Boost and Inverter
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Temperature Sensor
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Compact size : F2 Package
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Press-fit Contact Technology
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Al2O3 Substrate with Low Thermal Resistance
FPF2C110BI07AS2数据文档
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FPF2C110BI07AS2

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