IXDN609CI

IXDN609CI概述

低边 IGBT MOSFET 灌:9A 拉:9A

Sleep easy by implementing this power driver by Ixys Corporation. This device has a maximum propagation delay time of 60 ns. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C.

IXDN609CI数据文档
型号 品牌 下载
IXDN609CI

IXYS Semiconductor

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IXDN509SIAT/R

IXYS Semiconductor

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IXDN514D1T/R

IXYS Semiconductor

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IXDN514SIAT/R

IXYS Semiconductor

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IXDN604SI

IXYS Semiconductor

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IXDN602SIA

IXYS Semiconductor

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IXDN609SI

IXYS Semiconductor

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IXDN630CI

IXYS Semiconductor

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IXDN630YI

IXYS Semiconductor

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IXDN602PI

IXYS Semiconductor

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IXDN604SIATR

IXYS Semiconductor

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