W29C040P-12B

512K ´8 CMOS FLASH MEMORY

GENERAL DESCRIPTION

The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K  ´8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in fast write erase/program operations with extremely low current consumption compared to other comparable 5-volt flash memory products. The device can also be written erased and programmed by using standard EPROM programmers.

FEATURES

· Single 5-volt write erase and program operations

· Fast page-write operations

\- 256 bytes per page

\- Page write erase/program cycle: 5 mS typ.

\- Effective byte-write erase/program cycle time: 19.5 mS

\- Optional software-protected data write

· Fast chip-erase operation: 50 mS

· Two 16 KB boot blocks with lockout

· Typical page write erase/program cycles: 1K/10K typ.

· Read access time: 90/120 nS

· Ten-year data retention

· Software and hardware data protection

· Low power consumption

\- Active current: 25 mA typ.

\- Standby current: 20 mA typ.

· Automatic write erase/program timing with internal VPP generation

· End of write erase/program detection

\- Toggle bit

\- Data polling

· Latched address and data

· All inputs and outputs directly TTL compatible

· JEDEC standard byte-wide pinouts

· Available packages: TSOP and PLCC