3.3V / 5V 1兆位128KB X8 ZEROPOWER SRAM 3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM
SUMMARY DESCRIPTION
The M48Z129Y/V ZEROPOWER® SRAM is a 1,048,576 bit non-volatile static RAM organized as 131,072 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic 32-pin DIP Module. The
M48Z129Y/V directly replaces industry standard 128K x 8 SRAM. It also provides the non-volatility of FLASH without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed.
FEATURES SUMMARY
■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY
■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES
■ 10 YEARS OF DATA RETENTION IN THE ABSENCE OF POWER
■ MICROPROCESSOR POWER-ON RESETRESET VALID EVEN DURING BATTERY BACK-UP MODE
■ BATTERY LOW PIN - PROVIDES WARNING OF BATTERY END-OF-LIFE
■ AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION
■ WRITE PROTECT VOLTAGES VPFD= Power-fail Deselect Voltage:
– M48Z129Y: VCC= 4.5 to 5.5V 4.2V ≤VPFD ≤4.5V
– M48Z129V: VCC= 3.0 to 3.6V 2.7V ≤VPFD ≤3.0V
■ SELF-CONTAINED BATTERY IN THE CAPHAT™ DIP PACKAGE
■ PIN AND FUNCTION COMPATIBLE WITH JEDEC STANDARD 128K x 8 SRAMs
| 型号 | 品牌 | 下载 |
|---|---|---|
| M48Z129Y-70PM1 | ST Microelectronics 意法半导体 | 下载 |
| M48Z02-70PC1 | ST Microelectronics 意法半导体 | 下载 |
| M48Z12-70PC1 | ST Microelectronics 意法半导体 | 下载 |
| M48Z58Y-70PC1 | ST Microelectronics 意法半导体 | 下载 |
| M48Z58-70PC1 | ST Microelectronics 意法半导体 | 下载 |
| M48Z35Y-70PC1 | ST Microelectronics 意法半导体 | 下载 |
| M48Z35-70PC1 | ST Microelectronics 意法半导体 | 下载 |
| M48Z08-100PC1 | ST Microelectronics 意法半导体 | 下载 |
| M48Z58Y-70MH1F | ST Microelectronics 意法半导体 | 下载 |
| M48Z32V-35MT1F | ST Microelectronics 意法半导体 | 下载 |
| M48Z02-150PC1 | ST Microelectronics 意法半导体 | 下载 |