PXFC191507FCV1XWSA1

射频金属氧化物半导体场效应RF MOSFET晶体管 RFP-LD10M

* Broadband internal input and output matching * Typical Pulsed CW performance, 1990 MHz, 28 V, 10 µs pulse width, 10% duty cycle, class AB test * Output power at P1dB = 140 W * Efficiency = 54% * Gain = 19.5 dB * Typical single-carrier WCDMA performance,1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test Model 1 with 16DPCH * Output power = 32 W avg * Efficiency = 34% * Gain = 20 dB * ACPR = –31 dBc@ 5 MHz * Capable of handling 10:1 VSWR @28 V, 150 W CW output power * Integrated ESD protection : Human Body Model, Class 1C per JESD22-A114 * Low thermal resistance * Pb-free and RoHS compliant