AFT23S160W02GSR3

Trans RF MOSFET N-CH 65V 3Pin NI-780GS T/R

Overview

The AFT23S160W02SR3 and 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.

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## Features

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

* Optimized for Doherty Applications

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.

## Features RF Performance Table

### 2300 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

2300 MHz| 17.7| 31.0| 6.8| –34.6| –18

2350 MHz| 17.8| 30.5| 6.7| –34.5| –25

2400 MHz| 17.9| 30.3| 6.6| –33.9| –14