IGBT 晶体管 IGBT
The IGBT transistor from Renesas is the best electronic switch for fast switching. Its maximum power dissipation is 39700 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with trench technology. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| RJH60M3DPP-M0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60F7DPQ-A0#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH65D27BDPQ-A0#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A01RDPD-A0#J2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A83RDPD-A0#J2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60D1DPP-E0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60D2DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60V1BDPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A83RDPP-M0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60M1DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A83RDPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |