BZW50-56B

STMICROELECTRONICS  BZW50-56B  TVS二极管, TVS, Transil BZW50系列, 双向, 56 V, 99.6 V, 轴向引线, 2 引脚

129V 夹子 465A（8/20µs） Ipp TVS - 通孔 R-6

得捷:
TVS DIODE 56VWM 129VC R6

e络盟:
TVS二极管, Transil BZW50系列, 双向, 56 V, 99.6 V, 轴向引线, 2 引脚

艾睿:
Save yourself hassle by equipping your device with STMicroelectronics&s; BZW50-56B TVS diode which will react to sudden or momentary overvoltage conditions. Its maximum leakage current is 5 μA. Its test current is 1 mA. This device&s;s maximum clamping voltage is 129 V and minimum breakdown voltage is 62.2 V. Its peak pulse power dissipation is 5000 W. This TVS diode has an operating temperature range of -65 °C to 175 °C.

安富利:
Diode TVS Single Bi-Dir 56V 5KW 2-Pin Case R-6 T/R

Chip1Stop:
Diode TVS Single Bi-Dir 56V 5KW 2-Pin Case R-6 T/R

TME:
Diode: transil; 5kW; 99.6V; 50A; bidirectional; R6

Verical:
TVS Diode Single Bi-Dir 56V 5KW 2-Pin Case R-6 T/R

Newark:
# STMICROELECTRONICS  BZW50-56B  TVS Diode, Transil BZW50 Series, Bidirectional, 56 V, 99.6 V, Axial Leaded, 2 Pins