TO-18 NPN 45V 0.03A
Implement this NPN GP BJT from to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| JANTXV2N930 | Microsemi 美高森美 | 下载 |
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| JANTX2N2920 | Microsemi 美高森美 | 下载 |
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| JANTX2N3019 | Microsemi 美高森美 | 下载 |
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| JANTX2N3019S | Microsemi 美高森美 | 下载 |
| JANTX1N5314-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5312UR-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5314UR-1 | Microsemi 美高森美 | 下载 |